absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 43 i d @ v gs = 12v, t c = 100c continuous drain current 27 i dm pulsed drain current 172 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 43 a e ar repetitive avalanche energy 30 mj dv/dt peak diode recovery dv/dt a 5.7 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 ( for 5s) weight 3.3 (typical) g pd - 91397b pre-irradiation international rectifiers radhard hexfet ? technol- ogy provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been character- ized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. o c a radiation hardened power mosfet surface mount (smd-2) 5/4/2000 www.irf.com 1 product summary part number radiation level r ds(on) i d qpl part number irhna7260 100k rads (si) 0.07 w 43a jansr2n7433u irhna3260 300k rads (si) 0.07 w 43a JANSF2N7433U irhna4260 600k rads (si) 0.07 w 43a jansg2n7433u irhna8260 1000k rads (si) 0.07 w 43a jansh2n7433u features: n single event effect (see) hardened n low r ds(on) n low total gate charge n proton tolerant n simple drive requirements n ease of paralleling n hermetically sealed n surface mount n light weight for footnotes refer to the last page irhna7260 200v, n-channel ref: mil-prf-19500/664 rad-hard ? hexfet ? mosfet technology smd - 2
2 www.irf.com irhna7260 pre-irradiation electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 v v gs =0 v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.26 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 0.070 v gs = 12v, i d = 27a on-state resistance 0.077 w v gs = 12v, i d = 43a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 9.0 s ( )v ds > 15v, i ds = 27a ? i dss zero gate voltage drain current 25 v ds = 160v,v gs =0v 250 v ds = 160v v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 290 v gs = 12v, i d = 43a q gs gate-to-source charge 42 nc v ds = 100v q gd gate-to-drain (miller) charge 120 t d (on) turn-on delay time 50 v dd = 100v, i d = 43a, t r rise time 200 r g = 2.35 w t d (off) turn-off delay time 200 t f fall time 130 l s + l d total inductance 4.0 c iss input capacitance 5300 v gs = 0v, v ds = 25v c oss output capacitance 1200 pf f = 1.0mhz c rss reverse transfer capacitance 360 na w ? nh ns m a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page thermal resistance parameter min typ max units test conditions r thjc junction-to-case 0.42 r thjpcb junction-to-pc board 1.6 solder to a 1 sq. copper clad pc board c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 43 i sm pulse source current (body diode) 172 v sd diode forward voltage 1.8 v t j = 25c, i s = 43a, v gs = 0v ? t rr reverse recovery time 820 ns t j = 25c, i f = 43a, di/dt 3 100a/ m s q rr reverse recovery charge 8.5 c v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from center of drain pad to center of source pad
www.irf.com 3 pre-irradiation irhna7260 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 600 to 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 200 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 50 a v ds =160v, v gs =0v r ds(on) static drain-to-source ? 0.075 0.16 w v gs = 12v, i d =27a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.07 0.11 w v gs = 12v, i d =27a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhna7260 (jansr2n7433u) 2. part numbers irhna3260 (JANSF2N7433U), irhna4260 (jansg2n7433u) and irhna8260 (jansh2n7433u) fig a. single event effect, safe operating area v sd diode forward voltage ? 1.8 1.8 v v gs = 0v, i s = 43a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page 0 50 100 150 200 0 -5 -10 -15 -20 vgs vds cu br ion let energy range v ds(v) mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v cu 28 285 43 190 180 170 125 br 36.8 305 39 100 100 100 50
4 www.irf.com irhna7260 pre-irradiation fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 5 6 7 8 9 10 11 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 10 100 1000 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 43a
www.irf.com 5 pre-irradiation irhna7260 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 43 a v = 40v ds v = 100v ds v = 160v ds 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
6 www.irf.com irhna7260 pre-irradiation fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation irhna7260 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 12v 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 19a 27a 43a
8 www.irf.com irhna7260 pre-irradiation ? pulse width 300 m s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.54mh peak i l = 43a, v gs = 12v a i sd 43a, di/dt 410a/ m s, v dd 200v, t j 150c case outline and dimensions smd-2 foot notes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 5/00
|
